MMBT6427LT1G دیتاشیت

MMBT6427LT1G

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نام دیتاشیت MMBT6427LT1G
حجم فایل 76.419 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت MMBT6427LT1G

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Darlington Transistors
  • Datasheet: onsemi MMBT6427LT1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 225mW
  • Transition frequency (fT): -
  • DC current gain (hFE@Vce,Ic): 20000@5V,100mA
  • Collector-emitter voltage (Vceo): 40V
  • Collector cut-off current (Icbo@Vcb): 1uA
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@500mA,500uA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Base Part Number: MMBT6427
  • detail: Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 350mW Surface Mount SOT-23-3 (TO-236)

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